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| (R) ISL73096RH Data Sheet March 29, 2007 FN6475.0 Radiation Hardened Ultra High Frequency NPN-PNP Transistor Array The ISL73096RH is a radiation hardened transistor array consisting of three NPN transistors and two PNP transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides an immunity to Single Event Latch-up and the capability of highly reliable performance in any radiation environment. The high gain-bandwidth product and low noise figure of these transistors make them ideal for use in high frequency amplifier and mixer applications. Monolithic construction of the NPN and PNP transistors provides the closest electrical and thermal matching possible. Access is provided to each terminal of the transistors for maximum application flexibility. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-07218. A "hot-link" is provided on our website for downloading. Features * Electrically Screened to SMD # 5962-07218 * QML Qualified per MIL-PRF-38535 Requirements * Radiation Environment - Gamma Dose () . . . . . . . . . . . . . . . . . 3 x 105RAD(Si) - SEL Immune. . . . . . . Bonded Wafer Dielectric Isolation * NPN Gain Bandwidth Product (FT) . . . . . . . . .8GHz (Typ) * NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . 130 (Typ) * NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 50V (Typ) * PNP Gain Bandwidth Product (FT). . . . . . . . 5.5GHz (Typ) * PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . 60 (Typ) * PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 20V (Typ) * Noise Figure (50) at 1GHz . . . . . . . . . . . . . .3.5dB (Typ) * Collector-to-Collector Leakage. . . . . . . . . . . . . <1pA (Typ) Applications * High Frequency Amplifiers and Mixers - Refer to Application Note AN9315 * High Frequency Converters * Synchronous Detectors Pinout ISL73096RH (16 LD SBDIP) CDIP2-T16 TOP VIEW Q1B Q1E Q1C Q2E Q2B Q2C Q3E Q3B 16 NC Q1 Q5 15 Q5C 14 Q5B 13 Q5E Q2 Q4 12 Q4C 11 Q4B 10 Q4E Q3 9 Q3C Ordering Information 1 2 3 4 5 6 7 8 ORDERING NUMBER 5962F0721801V9A INTERNAL MKT. NUMBER ISL73096RHVX TEMP. RANGE (C) -55 to +125 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2007. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ISL73096RH Die Characteristics DIE DIMENSIONS: 52.8 mils x 52.0 mils x 14 mils 1 mil 1340m x 1320m x 355.6m 25.4m INTERFACE MATERIALS: Glassivation: Type: Nitride Thickness: 4kA 0.5kA Top Metallization: Type: Metal 1: AlCu (2%)/TiW Thickness: Metal 1: 8kA 0.5kA Type: Metal 2: AlCu (2%) Thickness: Metal 2: 16kA 0.8kA Substrate: UHF-1X Bonded Wafer, DI Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: Floating ADDITIONAL INFORMATION: Worst Case Current Density: 3.04 x 105A/cm2 Transistor Count: 5 Metallization Mask Layout ISL73096RH. All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 2 FN6475.0 March 29, 2007 |
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